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Ordering number:EN2007A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1419/2SC3649
High-Voltage Switching Applications
Features
* Adoption of FBET, MBIT processes. * High breakdown voltage and large current capacity. * Very small size making it easy to provide highdensity hybrid ICs.
Package Dimensions
unit:mm 2038
[2SA1419/2SC3649]
E : Emitter C : Collector B : Base
( ) : 2SA1419
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Conditions
SANYO : PCP (Bottom view)
Ratings (-)180 (-)160 (-)6 (-)1.5 (-)2.5 500
Unit V V V A A mW W
Moutned on ceramic board (250mm2x0.8mm)
Tj Tstg
1.5 150 -55 to +150
C C
Electrical Characteristics at Ta = 25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage Turn-ON Time Stotage Time Fall Time Symbol ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) VBE(sat) VCB=(-)120V, IE=0 VEB=(-)4V, IC=0 VCE=(-)5V, IC=(-)100mA VCE=(-)5V, IC=(-)10mA VCE=(-)10V, IC=(-)50mA VCB=(-)10V, f=1MHz IC=(-)500mA, IB=(-)50mA 100* 80 120 (22) 14 (-200) 130 IC=(-)500mA, IB=(-)50mA V(BR)CBO IC=(-)10A, IE=0 V(BR)CEO IC=(-)1mA, RBE= V(BR)EBO IE=(-)10A, IC=0 ton tstg tf See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. (-)0.85 (-)180 (-)160 (-)6 (40) 40 (0.7) 1.2 (40) 80 (-500) 450 (-)1.2 MHz pF pF mV mV V V V V ns ns s s ns ns Conditions Ratings min typ max (-)1 (-)1 400* Unit A A
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/4277TA, TS No.2007-1/4
2SA1419/2SC3649
* : The 2SA1419/2SC3649 are classified by 100mA hFE as follows :
100 R 200 140 S 280 200 T 400
Marking 2SA1419 : AE 2SC3649 : CE
hFE rank : R, S, T
Switching Time Test Circuit
(For PNP, the polarity is reversed) Unit (resistance : , capacitance : F)
No.2007-2/4
2SA1419/2SC3649
No.2007-3/4
2SA1419/2SC3649
No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 1998. Specifications and information herein are subject to change without notice.
PS No.2007-4/4

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